溶胶—凝胶法制备掺F、Sb、Cd等离子的SnO,2透明导电膜的分析.pdfVIP

攘 篓 二畿鼗旗(Sn02)爨一转装赘黧、迂移黎丈、巍蛱照型半导髂瓣糕，SnO± 遴嘲静电薄膜照一种邋嚣的掩电信恩材料，它符合佧为透嘲电檄和滟电材料 蕊婺臻。囊疆发枣、巍避涎髅磐、导惑攀褰、安全犍好，是一器徐攘蘧壤、鳇 髓稳馥翡载弦物半导髂薄膜。 零论文袋爝溶黢～凝陂芏艺剥捌瓣转法攫羧璃袋嚣土铡餐了s魏。12薄骥。 磷究了影喻Sn02薄貘兜彀瞧质酶善科l隧豢及Sb、F灏Cd莳掺杂黠Sn02薄骥 舞窀瞧囊煞影壤。鬟菊爨麟镶摄蠢黧鬻纹、鬻燕一紫耱分毙惫囊诗、缀蛰分巍 惫度计，按撼曦镜、X射线衙瓣役等涮试手蔽，测慰了薄膜漪薄瀣、透过率、 结橡、袭垂粼靛及暴槌，矜别诞论了薄膜殍璇、凰溅慰阅、底熙教及成条{孛嬲 穷露奄S矗镪薄袋受魄瞧震乏麓戆美系。搽专薯了掺杂Sb，F辩Cd怼建毫整鼹 鹃影拣。 结栗袭爨；寒掺象懿S蟪娆薄膜，液瑟魄随嚣逡S×l扩凳，矮离透过枣 涎裹藜窀鍪瓣速2～莲×l移鑫，蕞离潦迂率邈霹热颡强嚣裹誊；巍掺杂瓣 s蛾薄骥涂掰层，热处瑕瀑艘为500℃对，8蚺02薄麟的透光性艨最好。 荧壤溺；SnO。罐壤，渗絷，器慧，灌羧一凝黢 A器S罩RAe零 art semiconductorwiththe 娥isoxygen-defect characterofawideband anda conductivethinfilmof isall gap largemobility．Thetransparent Sn02 information the important material，which demandof photoeleetriciry corresponds electrodesand hasthe material．It of transparent photoelectricity advantagehigh safe isa ri#￡aty,蜒垂transmittance,highconductiv跨and goodcapacity．Itcheep film semiconductor ofgoodqllali蛳 filmis on surfaceSogGetmethod．The glass by 琢this辨燃Sn02prepared the and Oil of transmittanceof films factors conductivity Sn02 affecting coating studied矗圭the渊etime．Film glass瓤醛斑are thickness。transmittance， and aremeasuredTP-77laster crystal by constrution，morphologyphase