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第 29 卷 第 33 期 中 国 电 机 工 程 学 报 Vol.29 No.33 Nov. 25, 2009 2009 年 11 月 25 日 Proceedings of the CSEE ©2009 Chin.Soc.for Elec.Eng. 1 0258-8013 (2009) 33-0001-07 TM 761 A 470 40 文章编号： 中图分类号： 文献标志码： 学科分类号： ⋅ 电压源换流器高压直流输电装置中 IGBT 的过电流失效机制 罗湘，汤广福，温家良，贺之渊，庞辉，郑健超 ( 中国电力科学研究院，北京市 海淀区 100192) Over-current Failure Mechanism of IGBT WithinVoltage Source Converter Based High Voltage Direct Current LUO Xiang, TANG Guang-fu, WEN Jia-liang, HE Zhi-yuan, PANG Hui, ZHENG Jian-chao (China Electric Power Research Institute, Haidian District, Beijing 100192, China) ABSTRACT: The over-current failure mechanism of insulated 关键词：电压源换流器高压直流输电装置；绝缘栅双极型晶 gate bipolar transistor (IGBT) valves within voltage sourced 体管阀；过电流；失效机制 converter based high voltage direct current (VSC-HVDC) 0 引言 equipment was investigated for the purpose of enhancing the reliability of the VSC-HVDC equipment and for researching 随着我国电网规模的不断扩大，提高系统稳定 the test methods and test equivalence mechanism of the IGBT 性、增加电网输电能力、改善无功分布和电压支撑 valves. VSC-HVDC system and valve structure were 将成为我国电网面临的关键技术问题。应用基于以 introduced, and then the over-current faults of IGBT valves IGBT为代表的可关断器件的大功率电力电子装置 were classified into three types. Basing on the classification, 是解决这些问题的途径之一[1-5] 。 the voltage and current stresses as well as the inner physical 近年来，以ABB 公司为代表的国外公司发展 processes of the valves under different over-current faults were 了轻型直流输电技术，并将该技术成功应用于多 a