光电双向负阻晶体管的数值模拟与实验研究-电子学报.PDF

8 Vol.32 No. 8 2004 8 ACTA ELECTRONICA SINICA Aug. 2004 莫太山, 张世林, 郭维廉, 梁惠来, 毛陆虹, 郑云光 (, 300072) : (PBNRT)S. ,. PBNRT , S.: ,, ,; ,,. PBNRT . : ; S; ; + : TN364 . 3 : A : 037222112 (2004) 082 1260204 Numerical Simulation and Experimental Study of Photo2Bidirectional Negative Resistance Transistor MOTai2shan,ZHAN Shi2lin, UOWei2lian,LIAN Hui2lai,MAOLu2hong,ZHEN Yun2guang ( School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China) Abstract: The photo2bidirectional negativeresistancetransistor (PBNRT) is a novel/ S0 type photoelectricnegativeresistance device.Its photoelectric negative resistance characteristics were investigated both by experiment and numerical simulation and its e2 quivalent circuit isproposed.PBNRT has photo2 controlled current switchingeffect in the optical and electricmixed operatingmode, and its/ S0 negativeresistance characteristics can bemodulated bytwodifferent controlledways,using light and controlled voltagerespec2 tively.The simulated and experimental results both indicate that on increasing optical intensity,sustaining voltage almost remains un2 changed and snapback voltage decreases,thus reducing the negative resistance voltage range; while as controlled voltage increases, sustaining voltage and snapback voltage both increase accordingly,and output negativeresistance characteristic curve shifts right.All the properties mentioned above make it suitable for photoelectric switching, photo2 controlled oscillation and photoelectric detector. Key ords: PBNRT;/ S0 type photoelectric negative resistance;photo2 controlled current switching;numerical si