TbFeCo缓冲层对钴铁氧体薄膜的微观结构和磁性能影响-硅酸盐学报.PDF

· 1582 · 硅 酸 盐 学 报 2008 年 第36 卷第11 期 硅 酸 盐 学 报 Vol. 36 ，No. 11 2008 年 11 月 JOURNAL OF THE CHINESE CERAMIC SOCIETY November ，2008 TbFeCo 缓冲层对钴铁氧体薄膜的微观结构和磁性能影响 金沈贤，钟智勇，唐晓莉，荆玉兰，张怀武 ( 电子科技大学，电子薄膜与集成器件国家重点实验室，成都 610054) 摘 要：采用射频磁控溅射技术在非晶TbFeCo 缓冲层上制备了钴铁氧体(CoFe O )薄膜，并在空气中于300～1 000 ℃退火。采用X 射线衍射仪、振 2 4 动样品磁强计对薄膜的微观结构和磁性能进行表征。研究表明：样品均以单相尖晶石结构存在，在300 ℃退火时具有(111)择优取向；而高于300 ℃退 火时薄膜的(111)择优取向逐渐消失；在800 ℃以上退火时出现(400)择优取向。所有薄膜均具有高矫顽力和高垂直各向异性，800 ℃退火样品垂直于膜 3 面方向具有最大矫顽力832 × 10 A/m ，矩形度为0.73，900 ℃退火时矩形度达0.9 。 关键词：钴铁氧体；铽铁钴缓冲层；微观结构；磁性能 中图分类号：TM271 ；TM277 文献标识码：A 文章编号：0454–5648(2008)11–1582–04 EFFECTS OF TbFeCo UNDERLAYERS ON MICROSTRUCTURE AND MAGNETIC PROPERTY OF COBALT FERRITE THIN FILM JIN Shenxian ，ZHONG Zhiyong ，TANG Xiaoli，JING Yulan ，ZHANG Huaiwu (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China) Abstract: Cobalt ferrite(CoFe O ) thin films were deposited on amorphous TbFeCo underlayers using radio frequency magnetron 2 4 sputtering. The prepared films were annealed at 300 to 1 000 ℃ in atmosphere. The microstructure and magnetic properties of the films were characterized by X-ray diffraction and vibrating sample magnetometry. The results show that all films are single phase with a spinel structure. The film annealed at 300 ℃ has a (111) preferred orientation, and the (111) preferred orientation di