埋氧层固定电荷对SOI高压器件击穿电压的影响.pdfVIP

_______________________________________________________________________________ 埋氧层固定电荷对SOI高压器件 击穿电压的影响* 郭宇锋 张波 李肇基 罗晓蓉 张剑 （电子科技大学IC设计中心 610054） 摘要：本文通过求解具有界面电荷边界条件的二维泊松方程，建立了埋氧层固定界面电荷 Q对 RESURF SOI功率器件二维电场和电势分布影响的解析模型。解析结果和半导体器件模 f 拟器MEDICI数值分析结果相吻合。在此基础上分别研究了 Q对 RESURF SOI功率器件横向 f 和纵向击穿特性的影响规律。在横向讨论了不同硅膜厚度、氧层厚度和漂移区长度情况下 Q对表面电场分布的影响；在纵向通过分析硅膜内的场和势的分布，提出了临界埋氧层固定 f 界面电荷密度的概念，这是导致器件发生失效的最低界面电荷密度。 关键词：SOI； 固定界面电荷； 击穿电压 EEACC ：2560P, 2560B Influences of Buried-oxide Fixed Charges on the Breakdown Voltage for RESURF SOI Power Devices Guo Yufeng, Zhang Bo, Li Zhaoji, Luo Xiaorong, Zhang Jian (IC design Center, University of Electronic Science Technology, Chengdu, 610054) Abstract: Based on 2-D Poisson equation solution, an analytical model of Influences of Buried -oxide fixed interface charges Q on surface field and potential distribution for RESURF SOI f Power Devices is proposed in the paper. Analytical results are shown in good agreement with the numerical analysis obtained by the semiconductor devices simulator MEDICI. The influences of Q on lateral breakdown voltage are the function of structure parameter s including silicon film f thickness, buried oxide thickness and drift region length. The critical density of fixed interface charge is present for the influences of Q on vertical breakdown voltage. f Keyword: SOI, Fixed Interface Charges, Br eakdown Voltage EEACC ：2560P, 256