三维存储器的存储单元形状对其性能的影响丰伟a,b,邓宁a,b（清华大学.PDFVIP

三维存储器的存储单元形状对其性能的影响 丰伟a,b,邓宁a,b （清华大学a.微电子学研究所；b.微纳电子系， 北京100084） 摘要：简要介绍了三维存储器出现的背景和几种得到广泛关注的三维存储器；建立模型分析 了位成本缩减（BiCS ）、垂直堆叠存储阵列（VSAT ）和垂直栅型与非闪存阵列（VG NAND ） 三种代表性的三维存储器的存储单元的形状对其性能的影响，从理论分析的角度比较了三种 存储单元结构对其存储性能的影响；采用 Sentaurus 软件对三种存储单元的性能进行仿真， 从编程/擦除时间、存储窗口和保持性能三个方面比较了三种存储单元结构的存储性能。理 论分析结果和仿真结果都一致地表明BiCS 结构的圆柱孔形存储单元比其他两种存储单元更 有优势。 关键词：三维；与非型闪存；存储器单元；形状；Sentaurus 仿真 中图分类号：TN43 文献标识码：A 文章编号：1671-4776(2015)07-0409-05 Effect of the Memory Cell Shape of the 3D Flash Memory on Its Performances Feng Weia,b, Deng Ninga,b （a.Institute of Microelectronics; b. Department of Micro Nano Electronics, Tsinghua University, Beijing 100084, China) Abstract:The background of the 3D memory and several 3D memories obtained widespread concern were introduced. The models of the memory cells of the bit cost scalable(BiCS), vertical stacked array transistor(VSAT) and vertical gate NAND(VG NAND) flash memory array were established to analyze the effect of the memory cell shape on the performances of the memory cell. From the angle of the theoretical analysis, the effects of the three kinds of memory cell structures on the memory performances were compared. Finally, the performances of the three kinds of memory cells were simulated by the Sentaurus software. The performances of the three kinds of memory cells were compared from the aspects of the program/erase time, memory window and retention. The results of the theoretical analysis and simulation consistently show that the cylindrical memory cell of the BiCS has more advantages than the other two memory cells. Key words:3D; NAND flash memory; memory cell; shape; Sentaurus simulation DOI:10.13250/j.cnki.wndz.2015.07.001EEACC:2570 脉冲量子级联激光器吸收谱扫描方法 余兆安1a，1b，姚志宏1a，1b，冯雪1a，1b，梁圣法1a，1b，吕铁良2 （1.中国科学院 a. 微电子器件与集成技术重点实验室； b. 微电子研究所 纳米加工与新器件集成实验室， 北京100029； 2. 山东大学（威海） 机电与信息工程学院， 山东 威海2