碲化镉太阳能电池资料(国外英文资料).docVIP

碲化镉太阳能电池资料(国外英文资料) DOC documents may experience poor browsing on the WAP side. It is recommended that you first select TXT, or download the source file to the local view. GaAs solar cell version of history in order to find the silicon solar cell substitutes, people in addition to the development of polycrystalline silicon, amorphous silicon thin film solar cell, and solar cell development. Other materials including gallium arsenide III-V compounds, cadmium sulfide, cadmium sulfide and copper indium selenide thin battery. The battery, although CDs and the efficiency of CdTe thin film solar cells than in non efficiency of amorphous silicon thin film solar cell is high, the cost is low and easy to monocrystalline cells, large-scale production, but due to cadmium toxic, will cause serious pollution to the environment, therefore, is not a substitute for crystalline silicon solar cell is the most ideal GaAs III-V compounds and copper. Indium selenide thin film battery with high efficiency widespreadattention. GaAs belongs to III-V compound semiconductor materials, the energy gap is 1.4eV Good for high absorption of sunlight, suitable for matching with the solar spectrum, and high temperature, at the temperature of 250 DEG C, photoelectric conversion performance is still very good, the highest photoelectric conversion efficiency is about 30%, especially suitable for high temperature GaAs concentrator solar cells. Silicon wafer production mode and the traditional mode of production of the big the same need made epitaxy of GaAs, the epitaxial wafer diameter is usually 4 - 6 inches, much smaller than the 12 inch silicon wafer to wafer. Lei need special machine at the same time, the high cost of raw materials of Si GaAs, resulting in GaAs finished IC cost is relatively high. There are two kinds of current epitaxy is a chemical, MOCVD, a physical MBE.GaAs III-V compound thin film solar cells were prepared by MOVPE and LPE technology, the MOVPE preparation method of GaAs thin f