单步电沉积法制备CuInS_2薄膜_李娟.pdf

物理化学学报(Wuli Huaxue Xuebao) December Acta Phys. -Chim. Sin., 2009, 25(12) ：2445-2449 2445 [Article] 单步电沉积法制备CuInS2 薄膜 李 娟 莫晓亮* 孙大林 陈国荣* (复旦大学材料科学系, 上海 200433) 摘要： 采用单步电沉积法在Mo 基底上制备了高质量的CuInS2 薄膜. 用X 射线衍射仪(XRD)和扫描电子显微 镜(SEM)表征了样品的结构和形貌, 研究了沉积电位、退火温度、pH 值、反应物浓度等工艺条件对制备的CuInS2 薄膜形貌、组分及性能的影响. 制备的CuInS2 薄膜致密平整, 呈黄铜矿结构, 晶粒大小为1-2 μm. 用紫外-可见光 分光光度计测试了其光学性能, 计算得到常温下禁带宽度为1.41 eV, 非常适合用作薄膜太阳电池的吸收层材料. 关键词：太阳电池; CuInS ; 单步电沉积法; 沉积电位; 退火温度 2 中图分类号： O649 Preparation of CuInS2 Thin Films by One-Step Electrodeposition LI Juan MO Xiao-Liang* SUN Da-Lin CHEN Guo-Rong* (Department of Materials Science, Fudan University, Shanghai 200433, P. R. China) Abstract ： I -III -VI ternary chalcopyrite copper indium disulfide (CuInS ) films were prepared by one - step 2 2 electrodeposition technique on molybdenum substrates. The structure and morphology of the samples were characterized by X -ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The effects of deposition potential, annealing temperature, pH, and solution concentration on the formation of the electrodeposited thin films were investigated. The prepared CuInS2 thin films were found to be compact and uniform with grain sizes of 1-2 μm. Their optical property was characterized by UV-Vis s