MOCVD生长的SiC衬底高迁移率GaN沟道层AlGaNAlNGaN HEMT结构.pdfVIP

第 27 卷 　第 9 期 2006 年 9 月 半 　导 　体 　学 　报 CHIN ESE J OURNAL OF SEMICONDUCTORS Vol. 27 　No. 9 Sep . ,2006 3 Project supp orted by t he Knowledge Innovation Progra m of t he Chinese Acade my of Sciences (No. KGC X22SW210721) , t he Key Progra m of t he National Natural Science Foundation of China (No. , t he State Key Develop ment Progra m f or Basic Research of China (Nos . 513270505 , ,2002CB311903) , a nd t he National High Technology R D Progra m of China (No. 2002AA305304)- Corresp onding aut hor . Email :xlwang @red . se mi . ac . cn 　Received 4 Ap ril 2006 , revised ma nuscrip t received 11 May 2006 2006 Chinese Institute of Elect ronics MOCVD2Grown Al Ga N/ Al N/ Ga N HEMT Structure with High Mobility Ga N Thin Layer as Channel on SiC 3 Wang Xiaoliang 1 ,- , Hu Guoxin 1 , Ma Zhiyong 1 , Xiao Hongling 1 , Wang Cuimei 1 , L uo Weijun 1 , Liu Xinyu 2 , Chen Xiaojuan 2 , Li J ianping 1 , Li J inmin 1 , Qian He 2 , and Wang Zhanguo 1 (1 I nstit ute of Semiconductors , Chinese A cadem y of Sciences , B ei j ing 　100083 , China) (2 I nsti t ute of Microelect ronics , Chinese A cadem y of Sciences , Bei j ing 　100029 , China) Abstract : Al GaN/ AlN/ GaN high elect ron mobility t ransist or ( H EM T) st ructures wit h a high2mobilit y GaN t hin layer as a channel a re grow n on high resistive 6 H2SiC subst rates by metalorganic chemical vap or dep osition . The H EM T st ructure exhibits a typical two2dimensional elect ron gas (2D EG) mobility of 1944cm2 / ( V ·s) at room temp erature and 11588cm 2 / (V ·s ) at 80 K wit h almost equal 2D EG concent rations of about 1103 ×1013 cm - 2 . High crystal quality of t he H EM T st ructures is conf irmed by t riple2crystal X2ray diff raction analysis . At omic f orce microscop y measurements reveal a smoot h Al GaN surf ace wit h a root2mean2square roughness of 0127nm f or a scan area of 10μm ×10μm. H EM T devices wit h 018μm gate lengt h and 112mm gate widt h are f abricated using t he st ructures . A maximum