MMBT3904LT1.pdfVIP

1Motorola Small–Signal Transistors, FETs and Diodes Device Data    NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 60 Vdc Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance Junction to Ambient RJA 556 °C/W Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C PD 300 2.4 mW mW/°C Thermal Resistance Junction to Ambient RJA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARKING MMBT3904LT1 = 1AM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 — Vdc Collector–Base Breakdown Voltage (IC = 10
Adc, IE = 0) V(BR)CBO 60 — Vdc Emitter–Base Breakdown Voltage (IE = 10
Adc, IC = 0) V(BR)EBO 6.0 — Vdc Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL — 50 nAdc Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX — 50 nAdc 1. FR–5 = 1.0
0.75
0.062 in. 2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%. Thermal Clad is a registered trademark of the Berquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. Order this document by MMBT3904LT1/D     SEMICONDUCTOR TECHNICAL DATA   Motorola Preferred Device 1 2 3 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) ? Motorola, Inc. 1996 COLLECTOR 3 1 BASE 2 EMITTER REV 1  
  2 Motorola Small–Signal Transistors, FETs and Diodes Device Data ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(3) DC Current Gain (1) (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1