FinFET器件的集约阈电压模型_英文_张大伟.pdfVIP

? 1994-2010 China Academic Journal Electronic Publishing House. All rights reserved. 第 26 卷 　第 4 期 2005 年 4 月 　　 半 　导 　体 　学 　报 CHIN ESE J OURNAL OF SEMICONDUCTORS Vol. 26 　No. 4 　　Apr. ,2005 3 Project supported by National High Technology R D Program of China (No. 2003AA1Z1370) 　Zhang Dawei 　male ,was born in 1980 ,master candidate. His major interest is compact modeling for novel physical effect s in nanoscaled de2 vices. Email :zdw99 @mails. t singhua. edu. cn 　Received 7 September 2004 ,revised manuscript received 12 November 2004 Ζ 2005 Chinese Institute of Elect ronics Compact Threshold Voltage Model for FinFETs 3 Zhang Dawei , Tian Lilin , and Yu Zhiping ( I nstit ute of Microelect ronics , Tsinghua Universit y , B ei j ing 　100084 , China) Abstract : A 2D analytical elect rostatics analysis for the cross2section of a FinFET (or t ri2gate MOSFET) is per2 formed to calculate the threshold voltage. The analysis result s in a modified gate capacitance with a coefficient H in2 t roduced to model the effect of t ri2gates and it s asymptotic behavior in 2D is that for double2gate MOSFET. The po2 tential profile obtained analytically at the cross2section agrees well with numerical simulations. A compact threshold voltage model for FinFET ,comprising quantum mechanical effect s ,is then proposed. It is concluded that both gate capacitance and threshold voltage will increase with a decreased height ,or a decreased gate2oxide thickness of the top gate ,which is a t rend in FinFET design. Key words : FinFET ; 2D analytical elect rostatic analysis ; compact model ; threshold voltage PACC : 7340Q ; 6185 ; 0300 CLC number : TN304102 　　　Document code : A 　　　Article ID : 025324177 (2005) 0420667205 1 　Introduction D G2MOSFET and FinFET appear to be two of t he most p romising device st ruct ures [ 1～4 ] substit u2 ting current MOSFET beyond 65nm regime due to t he elect rostatic concern (i . e. off2state leakage cur2 rent) . Compact analytical modeling for these new st ru