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2008-PSS-Thermal instability of electron traps in InAs-GaAs.pdf

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2008-PSS-Thermal instability of electron traps in InAs-GaAs

Thermal instability of electron traps in InAs/GaAs quantum dot structures M. Kaniewska ? O. Engstro?m ? M. Kaczmarczyk ? G. Zaremba Received: 26 September 2007 / Accepted: 12 March 2008 / Published online: 3 April 2008 Springer Science+Business Media, LLC 2008 Abstract Deep level transient spectroscopy (DLTS) in temperature and frequency scanned modes has been used to characterize deep-level defects present in samples with InAs/GaAs quantum dots (QDs). Two deep energy traps have been studied in details, a trap with thermal activation energy at 1.03 eV, which has no correspondence to DLTS data in the literature to make any comparison and an accompanied trap at 0.79 eV belonging to EL2 family. The concentration of the 1.03 eV trap exhibited significant changes with temperature, whereas the trap at 0.79 eV was stable on a reduced level. The results for the 1.03 eV trap are discussed in terms of a metastable double-oscillator. 1 Introduction While there is a considerable amount of papers on quantum- confined energy levels related to QDs, much less work has been devoted to deep-level related defects existing in the presence of QDs. Commonly acting as non-radiative centers, they are undesirable in QD-based lasers because they degrade luminescence efficiency [1]. On the other hand, it has been demonstrated that a deep-level (M1) coupled to a QD energy level can provide a rapid energy-relaxation pathway through which electrons may thermalize and enhance luminescence efficiency of QDs [2]. Also, utilizing fast trapping into arsenic antisite defects in samples with low-temperature grown InAs/GaAs QDs, optical nonlin- earity and ultrafast response time have been demonstrated for use in all-optical switching [3]. Thus, an insight into defect properties in QD structures is highly motivated. Electrical measurement techniques based on depletion layer spectroscopy have been used to characterize deep-level defects present in InAs/GaAs QD samples. In the samples, when grown by mole