]英文写作总结资料.docxVIP

energy separation（energy difference）between the quantum dot (QD) groundand first-excited states能量间隔 Analysis by Transmission Electron Microscopy (TEM) has identified分析 Whilst同时 Stacking Fault s (SF) and threading dislocations (TD) are often associated with the large latticemismatch in most III – V semiconductor films.与…有关 the GaAs barrier layerwas divided in two parts分割 a characteristicv-shapegliding有…特征 Thepresence of these SFs is observed to create surface QDs被认为是 Areas区域 extending to延伸至 In contrast to与…对比 we would suggest this could be related to我们认为 dislocationsoccurring at the microscopic level出现在 migrate away from迁移开 spectral response光谱响应 in terms of根据，与…有关 composition，content组分 attractingstrong interest引起兴趣 aspects such as许多方面例如 As previously reported正如以前报道的 Theemission wavelength of the QDs red-shifted by 300 nm红移了300nm As the composition is increased, there is anincrease in density and size随着…增加什么增加 the reduction ofPL intensity for larger compositions occurs as aresult of threading dislocations being formed suppressed by压制，抑制 epilayer外延层 variation变化 interrupted growth method间断生长 ion (Ar+) laser with 514.53 nm氩离子激光波长 it can be seen that从…可以看出 reveal a strongquantum localization effect展示 Such a blue shift in EL wavelengthcould be attributed to the band-filling effect of localized energystates蓝移，归咎于，能带填充效应 Ablueshift of 3 and 1.7 cm?1蓝移 Incorporating结合 1.3–1.6mm has beenachieved forInAs/GaAs QDs by实现 are limited by性能局限于 received littleattention to date现在已经没人关注 spacer layer隔离层 the initial 15 nm of theGaAs SPL was deposited at 5101C, followingwhich the temperature was increased to 580 1 C forthe remainder of the GaAs SPL随后 thermal escape热逃逸 QD ensembles量子点群 the value ofEE值 are dramatically reduced巨大的 takes place发生，出现 QD PL bandcaused by PL图，引起 are taken into account考虑 activeregion活性区 verticalstrain coupling垂直耦合 sample c shows thehighest value (75 meV) followed by sample b with60 meV and sample d with 56 meV排序 is crucial for对…至关重要 zero-dimensional structures零维结构