AO8810替代型号DMN2019UTS.docxVIP

20V N-CHANNEL ENHANCEMENT MODE MOSFET AO8810替代型号DMN2019UTS V(BR)DSS RDS(ON) max ID max TA = 25°C 20V 18.5m? @ VGS = 10V 5.4 A 21m? @ VGS = 4.5V 5.0 A 24m? @ VGS = 2.5V 4.6 A 31m? @ VGS = 1.8V 3.5 A Description This new generation MOSFET has been designed to minimize the on- Features ? Low On-Resistance ? Low Input Capacitance ? Fast Switching Speed ? ESD Protected up to 2KV ? Totally Lead-Free Fully RoHS Compliant (Notes 1 2) ? Halogen and Antimony Free. “Green” Device (Note 3) ? Qualified to AEC-Q101 standards for High Reliability Mechanical Data state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications ? Power management functions ? Load Switch ? Case: TSSOP-8 ? Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 ? Moisture Sensitivity: Level 1 per J-STD-020 ? Terminal Connections: See Diagram Below ? Weight: 0.039 grams (approximate)  D D G1  ESD PROTECTED TO 2kV Top View Bottom View Top View S1 S2 hannel N-Channel Pin Configuration Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN2019UTS-13 TSSOP-8 2500/Tape Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) 2011/65/EU (RoHS 2) compliant. 2. See for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, Green and Lead-free. 3. Halogen- and Antimony-free Green” products are defined as those which contain 900ppm bromine, 900ppm chlorine (1500ppm total Br + Cl) and 1000ppm antimony compounds. 4. For packaging details, go to our website at . Marking Information Logo Part no Xth week: 01~53 Year: “12” = 2012 Top View  Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25?C TA = +70?C ID 5.4 4.3