ZVN4525ZTA;中文规格书,Datasheet资料.pdfVIP

1ISSUE 1 - MARCH 2001 ZVN4525Z SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general high voltage circuits. SOT223 and SOT23-6 versions are also available. FEATURES ? High voltage ? Low on-resistance ? Fast switching speed ? Low gate drive ? Low threshold ? Complementary P-channel Type ZVP4525G ? SOT223 package APPLICATIONS ? Earth Recall and dialling switches ? Electronic hook switches ? High Voltage Power MOSFET Drivers ? Telecom call routers ? Solid state relays ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL ZVN4525ZTA 7 8mm embossed 1000 units DEVICE MARKING N52 250V N-CHANNEL ENHANCEMENT MODE MOSFET DD S G Top View SOT89 / ISSUE 1 - MARCH 2001 ZVN4525Z 2 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS 250 V Gate Source Voltage VGS ±40 V Continuous Drain Current (VGS=10V; TA=25°C)(a) (VGS=10V; TA=70°C)(a) ID ID 240 192 mA mA Pulsed Drain Current (c) IDM 1.44 A Continuous Source Current (Body Diode) IS 1.1 A Pulsed Source Current (Body Diode) ISM 1.44 A Power Dissipation at TA=25°C (a) Linear Derating Factor PD 1.2 9.6 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 103 °C/W Junction to Ambient (b) R θJA 50 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t
5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal NB High Voltage Applications For high voltage applications, the appropriate industry sector guidelines should be consid