SXA-389BZ;SXA-389B;中文规格书,Datasheet资料.pdfVIP

Features 1 of 10 Optimum Technology Matching? Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES?, RFMD?, Optimum Technology Matching?, Enabling Wireless Connectivity?, PowerStar?, POLARIS? TOTAL RADIO? and UltimateBlue? are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ?2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@. InP HBT LDMOS RF MEMS SXA-389B(Z) 400MHz to 2500MHz ?W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS RFMD’s SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipo- lar Transistor (HBT) MMIC housed in low-cost surface mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400 MHz to 2500 MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications. 0 5 10 15 20 25 30 35 40 45 50 850 MHz 1960 MHz 2140 MHz 2450 MHz OIP3 P1dB Gain Typical OIP3, P1dB, Gain dB m ? Available in RFMD Green, RoHS Compliant, and Pb-Free (Z Part Number) ? Lower RTH for increased MTTF 108 Hours at TLead=85°C ? On-Chip Active Bias Control, Sin- gle 5V Supply ? Excellent Linearity:+43dBm Typ. OIP3 at 1960MHz ? High P1dB :+25dBm Typ. ? High Gain:+18.5dB at 850MHz ? Efficient: Consumes Only 575mW Applications ? W-CDMA, PCS, Cellular Systems ? Multi-Carrier Applications DS100712 ? Package: SOT-89 SXA-389B(Z) 400MHz to 2500MHz ?W Medium Power GaAs HBT Amplifier With