BSM75GB170DN2英文资料.pdfVIP

1 Oct-27-1997 BSM 75 GB 170 DN2 IGBT Power Module ? Half-bridge ? Including fast free-wheeling diodes ? Package with insulated metal base plate ? R G on,min = 22 Ohm Type V CE I C Package Ordering Code BSM 75 GB 170 DN2 1700V 110A HALF-BRIDGE 1 C67070-A2702-A67 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage V CE 1700 V Collector-gate voltage R GE = 20 k? V CGR 1700 Gate-emitter voltage V GE ± 20 DC collector current T C = 25 °C T C = 80 °C I C 75 110 A Pulsed collector current, t p = 1 ms T C = 25 °C T C = 80 °C I Cpuls 150 220 Power dissipation per IGBT T C = 25 °C P tot 625 W Chip temperature T j + 150 °C Storage temperature T stg -40 ... + 125 Thermal resistance, chip case R thJC ≤ 0.2 K/W Diode thermal resistance, chip case R thJCD ≤ 0.63 Insulation test voltage, t = 1min. V is 4000 Vac Creepage distance - 16 mm Clearance - 11 DIN humidity category, DIN 40 040 - F sec IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56 2 Oct-27-1997 BSM 75 GB 170 DN2 Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Gate threshold voltage V GE = V CE, I C = 5 mA V GE(th) 4.8 5.5 6.2 V Collector-emitter saturation voltage V GE = 15 V, I C = 75 A, T j = 25 °C V GE = 15 V, I C = 75 A, T j = 125 °C V CE(sat) - - 4.6 3.4 5.3 3.9 Zero gate voltage collector current V CE = 1700 V, V GE = 0 V, T j = 25 °C V CE = 1700 V, V GE = 0 V, T j = 125 °C I CES - - 2 0.5 - 0.75 mA Gate-emitter leakage current V GE = 20 V, V CE = 0 V I GES - - 400 nA AC Characteristics Transconductance V CE = 20 V, I C = 75 A g fs 27 - - S Input capacitance V CE = 25 V, V GE = 0 V, f = 1 MHz C iss - 11 - nF Output capacitance V CE = 25 V, V GE = 0 V, f = 1 MHz C oss - 1 - Reverse transfer capacitance V CE = 25 V, V GE = 0 V, f = 1 MHz C rss - 0.28 - 3 Oct-27-1997 BSM 75 GB 170 DN2 Electrical Characteristics, at T j = 25 °C, unless otherwise