DevelopmentofaLowDielectricConstant集成電路制造所需低介电常数聚合物的发展(正式版).docx

ADVANCEDDevelopment of a Low-Dielectric-Constant Polymer for the Fabrication of Integrated Circuit InterconnectBy Steven J. Martin,* James P. Godschalx, Michael E. Mills, Edward 0. Shaffer II, and Paul H. TownsendFor faster, smaller, and higher performance integrated circuits, a low dielectric constant insulator is required to replace silicon dioxide. Here the properties of a newdielectricDSiLK resin, a solution of a low-molecular-weight aromatic thermosetting 阴阳阳 are reviewed andexamples of its application in the fabrication of interconnect structures, such as the one shown in the Figure, aregiven.1. Introductiongrated circuit interconnect, summarizes the prop erties of the n巳w dielectric invented to meet that n巳巳d, and reviews pub-A new organic polymer, SiLK (tradema rk of The DowChemical Company) semiconductor dielectric, was recently developed to enable the fabrication of faster, smaller, and higher performan ce integrated circuits. The new material addresses a critical need of the microelectronics industry: an insulator with low dielectri c constant to replace silicon diox-ide. The electrical properties of silicon dioxide now limit the pe巾rmance of the microprocessor and other advanced semi- conductor devices so important to modem electronic and informat ion technologies. This article describes the need for low-diel民tric-constant materials in the fabrication of inte-土[] S. J. MartinThe Dow Chemical Company 2030 Buildi ngMidland , Ml 48674 (USA) E-mail: sjmartin @J. P.GodschalxThe Dow Chemical Company 1701 Buildi ngMidland , Ml 48674 (USA)M. E. MillsThe Dow Chemical Company 1714 BuildingMidland, Ml 48674 (USA)E. 0. Shaffer IIThe Dow Chemical Company 1702 BuildingMidland,Ml 48674(USA)P. H TownsendThe Dow Chemical Compa ny 1712 Buildi ngMidland , Ml 48674(USA)lisbed examples of its successful use in th巳 construction of interconnect structures 2. Need for Low-k Dielectrics Modern integrated circuit devices con