AtomisticFront-EndProcessModeling.pptVIP

Atomistic Front-End Process Modeling A Powerful Tool for Deep-Submicron Device Fabrication Thanks to: P. Castrillo (U. Valladolid) R. Pinacho (U. Valladolid) I. Martin-Bragado (U. Valladolid) J. Barbolla (U. Valladolid) L. Pelaz (U. Valladolid) G. H. Gilmer (Bell Labs.) C. S. Rafferty (Bell Labs.) M. Hane (NEC) Front-End Process Modeling The Atomistic KMC Approach Ion Implantation: The +1 model Impurity Atoms: Boron (I) KMC Simulations (Pelaz, APL 1999): Kick-out mechanism InBm complexes Impurity Atoms: Boron (II) KMC Simulations (Pelaz, APL 1999): Accurate prediction of electrically active B Impurity Atoms: Carbon (I) KMC Simulations (Pinacho, MRS 2001): Kick-Out Mechanism InCm Complexes Frank-Turnbull Mech. Extended Defects: Interstitials 311-defects dissolution Interstitial supersaturation Dislocation Loops However, {311} can in fact reach sizes 345 Extended Defects: Vacancies Extended Defects: Vacancies (II) Lattice / Non-Lattice KMC Amorphization / Recrystalization Amorphization: Massive lattice disorder Continuum spectrum of time-constants and atomic configurations involved Not amenable to atomic-scale KMC description for device sizes. Amorphization / Recrystalization Amorphization / Recrystalization Amorphization / Recrystalization 800 C, 60 s Charge Effects: Implementation Charge state update static (immobile species) dynamic (mobile species) Charge Effects: Examples Equilibrium conditions Non equilibrium Phosphorous in-diffusion Surface: I,V Inert Emission Rate = D0*exp(-(Ef+Em)/kT) Recomb. Probability = Surface: Impurity Atoms Surface-to-Bulk: (Diffusion from the Surface) Given the Surface concentration calculate the corresponding mobile species emission rate. Bulk-to-Surface: (Grown-in, Implant,…) Monitor the number (NA) of Impurity atoms that arrive at the surface. Emit the mobile species at a rate proportional to NA up to the solubility limit. Unforeseen effects can show-up when all mechanisms are included simultaneously Examples: Nominally “non-amor