InAsGaAs quantum dot and dots-in-well infrared photodetectors based on p-type valence-band intersublevel transitions》.pdfVIP

Infrared Physics Technology 70 (2015) 15–19 Contents lists available at ScienceDirect Infrared Physics Technology journal homepage: www.else /locate/infrared InAs/GaAs quantum dot and dots-in-well infrared photodetectors based on p-type valence-band intersublevel transitions A.G. Unil Perera a,⇑, Yan-Feng Lao a, Seyoum Wolde a, Y.H. Zhang b, T.M. Wang b, J.O. Kim c, Ted Schuler-Sandy c, Zhao-Bing Tian c, S.S. Krishna c a Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA b Key Laboratory of Artificial Structures and Quantum Control, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China c Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87106, USA h i g h l i g h t s We demonstrate high quantum efficiency (17%) InAs/GaAs p-type quantum dot infrared photodetector. The p-type hole response displays a well-preserved spectral profile, independent of the applied bias. The p-type quantum dot photodetector exhibits a strong far-infrared response up to 70 lm. a r t i c l e i n f o a b s t r a c t Article history: InAs/GaAs quantum dot (QD) and dots-in-well (DWELL) infrared photodetector (QDIP) based on p-type - Received 16 July 2014 valence-band intersublevel hole transitions are reported. Two response bands observed at 1.5–3 and 3– Available online 5 November 2014 10 lm are due to optical transitions from the heavy-hole to spin–orbit split-off QD level and from the