Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer》.pdf

Microelectronic Engineering 147 (2015) 67–71 Contents lists available at ScienceDirect Microelectronic Engineering journal homepage: www.else /locate/mee Electrical and physical characteristics of high-k gated MOSFETs with in-situ H2O and O2 plasma formed interfacial layer Yan-Lin Li a, Kuei-Shu Chang-Liao a,⇑, Chen-Chien Li a, Li-Ting Chen a, Tzu-Hsiang Su a, Yu-Wei Chang a, Ting-Chun Chen a, Chia-Chi Tsai a, Chia-Hung Kao a, Hao-Ting Feng a, Yao-Jen Lee a,b a Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan, ROC b National Nano Device Laboratories, Hsinchu, Taiwan, ROC a r t i c l e i n f o a b s t r a c t Article history: Interfacial layers formed by in-situ H O and O plasma in an atomic layer deposition chamber on electri- 2 2 Received 20 February 2015 cal and physical characteristics of high-k gated MOSFETs are investigated in this work. The dielectric con- Received in revised form 28 March 2015 stant of HfON gate dielectric can be up to 31 since more tetragonal HfO is obtained by H O plasma 2 2 Accepted 6 April 2015 formed interfacial layer (IL) with less oxygen. The effective oxide thickness is scaled down to 0.72 nm, Available online 11 April 2015