《X-ray metrology for advanced silicon processes》.pdfVIP

Applied Surface Science 253 (2006) 21–27 /locate/apsusc X-ray metrology for advanced silicon processes C. Wyon a,*, J.P. Gonchond b, D. Delille c, A. Michallet b, J.C. Royer a, L. Kwakman c, S. Marthon a a CEA-LETI Grenoble, 850 rue Jean Monnet, 38926 Crolles, France b STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France c Philips Semiconductors, 850 rue Jean Monnet, 38926 Crolles, France Available online 25 July 2006 Abstract X-ray reflectivity (XRR), X-ray fluorescence (XRF) and small angle X-ray scattering (SAXS) techniques are used to the monitoring of Cu/ porous low k processes, which are developed for the next generation (65 nm) integrated circuits. Sensitivity of XRR and XRF is sufficient to detect drifts of the copper barrier layer, copper seed layer and Cu CMP (chemical–mechanical polishing) processes. Their metrology key parameters comply with production requirements. SAXS allows determining the pore structure of low k films: average pore size and pore size distribution. # 2006 Published by Elsevier B.V. Keywords: X-ray reflectivity (XRR); Small angle X-ray scattering (SAXS); X-ray fluorescence (XRF); Cu interconnects; Low k; Dielectrics 1. Introduction This paper describes the use of XRR and XRF metrologies for solving some metrology challenges associated with the Scaling down t