《Plasma-based dry etching techniques in the silicon integrated circuit technology-ibmrd3602C》.pdfVIP

by G. S. Oehrlein Plasma-based J. F. Rembetski dry etching techniques in the silicon integrated circuit technology Plasma-based dry etching techniques play a etching techniques into integrated circuit manufacturing. major role in the formation of silicon-based Wet etching, which until the beginning of the 1980s was of this paper integrated circuits. The first part used extensively for pattern transfer, provides high etch reviews our understanding of the means for selectivity, i.e., the capability to terminate etching achieving etching directionality and selectivity precisely at an underlying, chemically different layer. in reactive etching using glow discharges. However, the isotropic nature of wet etching results in the rf Relevant trends in magnetically enhanced loss of critical, lateral dimensions; this is not acceptable in diode systems, microwave-excited electron the manufacture of VLSI devices. In addition to being cyclotron resonance plasmas, process anisotropic, plasma-based etching is compatible with clustering, real-time process monitoring and vacuum-based processes such as chemical vapor control, and computer modeling of glow deposition and molecular beam epitaxy, and is compatible discharges are discussedin the se