InP基In0.53Ga0.47As光电探测器的量子效率优化.pdf

第27卷第2期 红外与毫米波学报 V01．27，No．2 2008年4月 Millim．Waves April，2008 J．Infrared 文章编号：1001—9014(2008)02—0081—05 EFFICIENCY OF QUANTUM InP-BASED As In0．53Gao．47 TIAN Yil一，ZHANG Zhao．Bin91”，GU Yong．Gan91 for of ofFunctionalMaterials Institute (1．StateKeyLaboratory Informatics，ShanghaiMicrosystem andInformation of Technology，ChineseAcademySciences，Shanghai200050，China； of 2．PostgraduateSchool，ChineseAcademySciences，Beijing100039，China) modified modelonthe ofInP—based PIN was Abstract：Aphysical opticalresponse I10”Gao．47Asphotodetectorspresented． a and weresimulated．Theinfluencesofdevice factor，the quantum Byintroducingcollecting opticalresponse efficiency pa- ralneterson of PIN underbothfrontandbacksideilluminated quantumefficiencytypicalIno53Gao盯As／InPphotodetectors conditionswele our modifiedInGaAs／InPPDstructuresforback—illumina— investigatedbyusingmodel．Furthermore，two tionwere the structural werediscussed． optimal parameters proposed，and Keywords：short·wave—infrared；photovohaicdetectors；InGaAs；quantumefficiency N2 CLCnumber：IDocnlnent：A As光电探测器的量子效率优化 InP基IIlo．53 Ga0．47 田招兵1”， 顾 溢1”． 张永刚1 (1．中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室，上海200050；