SiO2缓冲层对溶胶-凝胶法制备的SnO2∶Sb薄膜光电性能的影响.pdfVIP

帅等 ·27· Si02缓冲层对溶胶一凝胶法制备的SnOz；Sb薄膜光电性能的影响／陈 SiOz缓冲层对溶胶一凝胶法制备的SnO：：Sb薄膜光电性能的影响” 陈 帅，赵小如，段利兵，白晓军，刘金铭，谢海燕，关蒙萌 (西北工业大学理学院。空问应用物理与化学教育部重点实验室，西安71007Z) 摘要 结构特点，利用紫外可见分光光度计测量了薄膜的透过率，利用四探针测试系统表征了薄膜的电学性能。讨论了掺 杂浓度以及Siq缓冲层厚度对薄膜光电性能的影响。结果表明，随着掺杂浓度的增大，薄膜的电阻率先降低而后略 有升高，当掺杂浓度为5％时，薄膜电阻率这到最小。为8．7X101n·m；并深入研究了缓冲层对薄膜性能的改善作 用：-3掺杂农度为5％时，随着缓冲层数的增加，薄膜方块电阻呈下降趋势，最小可达到95f1／口，电阻率达到1．1x 10一3n·cm。 关键词 溶胶一凝胶法透明导电氧化物sb掺杂Sn(h缓冲屡 中图分类号：()484．4 文献标识码：A of Effect Buffer Oilthe andElectrical of Si02 Layers Optical PropertiesSb-doped ThinFilms Process Sn02 bySol—gel CHEN Li Shuai，ZHAOXiaoru，DUAN un，LIUJ bing，BAIXiaoj inming， -XIE Haiyan，GUANMengmeng of and ofEducation，SchmlofScience， (KeyLaboratorySpaceAppliedPhysicsChemistry，Ministry Nonhwestem 710072) PloytechnicalUniversity，Xi’an AbstractThe thin a were meansof SnOz films methodinvestigatedby Sb-doped synthesizedby simplesol—gel di[[ractometer，visible and measurements X—ray spectrophotometer4-pointprobesresistivity system．Thesamples were thinfilmswithfutilestructure0f resultsshowedthattheresistivitiesofthe polycrystalline Sn02．The undoped filmsdecreasedatfirstandthenincreasedwith ofthe concentrationfrom itS increasedoping 1％to6％．andre