The Role of Reconstructed Surfaces in the Intrinsic Dissipative Dynamics of Silicon Nanores.pdfVIP

The Role of Reconstructed Surfaces in the Intrinsic Dissipative Dynamics of Silicon Nanores.pdf

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The Role of Reconstructed Surfaces in the Intrinsic Dissipative Dynamics of Silicon Nanores

The Role of Reconstructed Surfaces in the Intrinsic Dissipative Dynamics of Silicon Nanoresonators 1 2 1 M. Chu , R. E. Rudd , M. P. Blencowe 1Department of Physics and Astronomy, Dartmouth College, Hanover, New Hampshire 03755, USA 2Lawrence Livermore National Laboratory, Condensed Matter Physics Div., L-045, Livermore, CA 94551 USA 7 0 Dissipation in the flexural dynamics of doubly clamped nanomechanical bar resonators is inves- 0 tigated using molecular dynamics simulation. The dependence of the quality factor (Q) on temper- 2 ature and the size of the resonator is calculated from direct simulation of the oscillation of a series r of Si 001 bars with bare {100} dimerized surfaces. The bar widths range from 3.3 to 8.7 nm, all p with a fixed length of 22 nm. The fundamental mode frequencies range from 40 to 90 GHz and Q A from 102 near 1000 K to 104 near 50 K. The quality factor is shown to be limited by defects in the reconstructed surface. 0 3 PACS numbers: 85.85.+j, 03.65.Yz ] i c There is currently much interest in ultrahigh frequency crease approximately linearly with decreasing resonator s - nanoscale mechanical resonators for both fundamental size [3]. This size dependence is usually interpreted to l r science and engineering applications. From a fundamen- be a signature of surface-related dissipation mechanisms t m tal perspective, nanoelectromechanical systems (NEMS) being dominant in (sub-)micron scale resonat

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