Tensoresistive Effect in Single Crystal Microwires of Pbte Doped with Tl.pdfVIP

TENSORESISTIVE EFFECT IN SINGLE CRYSTAL MICROWIRES OF PbTe DOPED WITH Tl Zasavitsky E.A. Institute of Electronic Engineering and Industrial Technologies of Moldavian Academy of Sciences, Academiei str.3/3, Chisinau, MD-2028, Moldova E-mail: efim@lises.asm.md, efim@iieti.asm.md Abstract: Results of room temperature measurements of tensoresistive effect of thin single crystal microwires of Pb Tl Te (x=0.0000 ÷ 0.0025, d = 5 ÷ 20 m) obtained 1-x x from the melted compound of corresponding composition by the filling of quartz capil- lary with the following crystallization of material are presented. For the samples corre- sponding to chemical composition with concentration of thallium x ~0,0025 an essential increase of tensoresistive effect (resistance changes for elastic elongations per unit length of a crystal) in comparison with nondoped samples is observed. Various mecha- nisms which can lead to observable anomalies, including resonance scattering are dis- cussed. Obtained experimental results allow us to suppose that the observed peculiari- ties can be interpreted on the basis of model of an impurity band of Tl in PbTe. Keywords: Lead chalcogenides, tensoresistive effect, band structure, impurity of elements of the III group in lead chalcogenides. 1. Introduction 4 6 Interest to narrow-gap to semiconductor compounds B is caused by a lot of unique physical prop- erties and an opportunity of their practical application in various technical devices (infra-red detec-