MgZnOZnO单量子阱结构的光波导效应.pdfVIP

Optical Waveguide Characterization of MgZnO/ZnO Single Quantum Well 1 1 1 1 Xuming Bian , Jingwen Zhang* , Xun Hou 1Key Laboratory of photonics technology for information, Shaanxi province, Xi’an Jiaotong University Xi’an, P. R. China 710049 *Email: jwzhang@ Abstract In order to accurately model and design MgZnO/ZnO heterostructure optoelectronic devices, a precise knowledge of the fundamental optical properties for ZnO and its alloys is important. However, few studies have reported on the optical waveguide characterization. In this letter, optical waveguide characterization of MgZnO/ZnO quantum well was preliminary studied, and optical confinement factor Г of the strained active region as well as the intensity distribution of the quantum well were figured out. From the results obtained above, this paper describes an optimal design for the molar concentration of Mg in the waveguide region and restrict region as well as thickness of the strained active region, waveguide layer, confined layer. Keywords: MgZnO/ZnO quantum well, effect of waveguide, optical confinement factor Г, intensity distribution. 1 Introduction Zinc oxide is a Ⅱ-Ⅵ semiconductor compound with a wide band gap ≈3.37eV which has important optoelectronic(UV) and piezoelectric properties. Different from many other Ⅱ-Ⅵ compounds, ZnO