已打铜铟镓硒柔性薄膜太阳电池的制备及性能表征.pdfVIP

研 究 与 设 计 铜铟镓硒柔性薄膜太阳电池的制备及性能表征 方小红，赵彦民，杨 立，冯金晖，李 巍 （中国电子科技集团公司第十八研究所化学与物理电源技术重点实验室，天津300381） 25 ～70 mm 0.8～1.2 mm Mo CuIn 摘要：以厚度为 的钛箔为衬底，直流磁控溅射法制备 的底电极 薄膜，而后以 和 CuGa 靶交替溅射制得Cu-In-Ga 金属预制膜，再以真空硒化法制得CuIn Ga Se 薄膜。以化学浴沉积法制备缓冲层 1－x x 2 CdS ，射频磁控溅射法制备 ZnO 和 ZAO ，直流磁控溅射法制备上电极，制得结构为衬底 Ti /Mo/CIG S/CdS/ZnO/ZAO/Al 7.3% 25 ℃, AM 0 ，其光电转换效率达到 （ ）。 关键词：铜铟镓硒；薄膜；太阳电池；柔性 TM 914.4 A 1002-087 X(2009)05-0406-03 中图分类号： 文献标识码： 文章编号： Preparation and property of CuIn Ga Se thin film solar cells 1－x x 2 on flexible substrates FANG Xiao-hong, ZHAO Yan-min, YANG Li, FENG Jin-hui, LI Wei (National Key Lab of Power Sources,Tianj in Institute of Power Sources, Tianj in 300381, China) Abstract: CuIn Ga Se thin film solar cells were preparatived on 27~70 mm thick Ti foils flexible substrates. A 0.8~1.2 mm 1 －x x 2 molybdenum (Mo) layer was deposited by DC magnetron sputtering, which served as the back contact. The CIGS absorbing layers were grown by the two-step method. Cu-In-Ga metallic precursors were deposited using Cu-Ga and Cu-In alloy targets by DC magnetron sputtering. The metallic precursor films were selenized in vacuum evaporation system. Intrinsic-ZnO and Al-doped ZnO were deposited by ratio-frequency (RF) sputtering on CBD CdS devices, and the Al top contact was deposited by DC