仿真的研究背发射极注入效率对NPT-IGBT温度特性的影响.pdfVIP

仿真研究背发射极注入效率对NPT- IGBT 温度特性的影响 1 1 1 1 1 刘钺杨 胡冬青 贾云鹏 吴郁 田飞飞 1) 北京工业大学电控学院，北京100124 1) Email ：liuyueyang@emails.bjut.edu.cn 摘 要 绝缘栅双极晶体管（简称IGBT ）是电力电子领域应用非常广泛的器件。目前国内产业界对IGBT 研究很热， 1200V NPT-IGBT 已有生产，600V NPT-IGBT 不久将来也将成为产业化的目标。而IGBT 相关的研究主要集中在电学特性， 但对功率半导体器件来说，温度特性直接影响器件可靠性，因此对器件温度特性研究非常重要。本文采用ISE TCAD 仿真工 具，通过仿真研究600V NPT-IGBT 在不同背发射极（集电极）注入效率下、不同温度下的静态特性和开关特性，比较低导 通压降IGBT 和快速IGBT 的热稳定性，为器件设计、器件应用时参数选择提供一定参考。 关键词 NPT-IGBT ，温度特性，关断损耗 Simulation of the temperature Characteristics of back emitter injection efficiency of the NPT- IGBT 1 1 1 1 1 Yueyang Liu ，Dongqing Hu , Yunpeng Jia ，Yu Wu ，FeiFei Tian 1) Dept. of Electronic Sci. Tech. Beijing University of Technology Beijing, 100124 Abstract :The insulated gate bipolar transistors (referred to as IGBT) are widely used in power electronics. At present, IGBT is a hot research issue in domestic industry, 1200V NPT-IGBT has been produced, and 600V NPT-IGBT will also be a goal of industrialization in future. Researches of IGBT often focus on electrical properties, but the temperature plays an important role in the device reliability when it is referred to the power semiconductor devices, so the research on temperature characteristics of the device is very significant. in this paper, ISE TCAD simulation tools were used to simulate static and switching characteristics of 600V NPT-IGBT at different back-emitter (collector) injection efficiency and different temperatures. The thermal stability of low conduction voltage drop and the fast IGBT were also compared, thus, w