N型SiC的Ni基欧姆接触研究(英文).pdfVIP

第 30 卷 　第 2 期 电 子 器 件 Vol. 30 　No . 2 2007 年 4 月 　　　 Ch inese J ou r nal Of Elect ro n D evices 　　 Ap r . 200 7 Invest igat ion of Ni2 a sed Oh mic Con tact s t o N2Type SiC 1 , 2 1 , 2 1 , 2 1 , 2 1 , 2 GUO H u i , Z H A N G Yi2m en , Z H A N G Yu2mi n g , Z H A N G J ia n , GA O J i n2xi a 1. Mi c r oe lect ronic Sc h ool X i di an U ni ver si t y , Xi’an 7 1007 1 , Chin a ; 2. Key L ab o f Mi nis tr y o f E d u ca ti on f or Wi de and2Ga p S emi cond uc tor M a t er i a ls an d Devices , Xi’an 7 1007 1 , Chi n a Abstr act :The Ni2based Oh mic contact to n2t ype SiC is stu died. An arr ay of TL M test pat terns with Ni/ n2t yp e SiC st ruct ure is formed on N2well s created by N ion imp lant ation into Si faced p2typ e 4 H2SiC epilayer ,which t he sp ecif2 - 4 2 ic cont act r esistance ρof Ni/ 4 H2SiC is about 1. 7 ×10 Ω ·cm . High temperatu re annealing r esult s p rovi de the c evidence that C vacancy VC , acting as donor s , cont rib ut es to reduce effective Schott ky barrier heigh t for t he t rans2 port of electr ons and form ohmic contact. The den sit y of effective carrier s p rovided b y C vacancies can be esti mated wit h the si mulation based on the test p at tern . It is foun d t hat the effect of C vacancies formed durin g t he hi gh tem2 peratur e on t he ohmic contact i s more t han t he doping level. Key wor ds : Silicon Car bide ; oh mi c cont act ; Ni ; N