磁控溅射法制备Cu膜本科论文.doc

PAGE PAGE I磁控溅射法制备Cu膜摘 要沉积速率高、基材温升低的磁控溅射工艺，已经成为半导体集成电路金属化工艺的主流。本文重点对在硅晶圆上溅射金属铜薄膜的实际镀膜过程中的淀积速率进行了理论和实验研究。结果表明淀积速率随工作气压的增大先增大后减小；随着温度增大而减小，但均匀性增强；当入射离子的能量超过溅射阈值时，淀积速率随着溅射功率的增加先增加后下降；同时还讨论了溅射功率、淀积时间对膜厚和膜质量的影响。以上结论对于获得良好的镀膜工艺控制是很有意义的。关键词 溅射；集成电路金属化；淀积速率影响因素；最佳工艺条件Magnetron Sputtering Cu filmAbstractThe high deposition rate， substrate temperature rise of low-magnetron sputtering process, has become the mainstream of the semiconductor integrated circuit metallization process. This article focuses on theoretical and experimental research in the actual coating process of the sputtering of copper films on silicon wafers in the deposition rate. Studies have shown that the deposition rate first increases with increasing working pressure and then decreases; deposition rate decreases as the temperature increases, but the enhanced uniformity; when the incident ion energy greater than the sputtering threshold, the deposition rate With the sputtering power increased first and then decreased; and sputtering power, deposition time on the film thickness and film quality. The conclusion is very significant to get a good coating process control. Keywords Magnetron sputtering; IC metallization; Deposition rate and influencing factors; Optimum process conditions目 录 TOC \o 1-3 \h \z \u HYPERLINK \l _Toc219261284 第1章 绪论 PAGEREF _Toc219261284 \h 1 HYPERLINK \l _Toc219261285 1.1 引言 PAGEREF _Toc219261285 \h 1 HYPERLINK \l _Toc219261286 1.2 溅射镀膜的特点 2 HYPERLINK \l _Toc219261286 1.3 金属薄膜制备方法 3 HYPERLINK \l _Toc219261287 1.3.1 三电极(四电极)溅射方法 3 HYPERLINK \l _Toc219261288 1.3.2 对向靶溅射法 3 HYPERLINK \l _Toc219261288 1.3.3 离子束溅射法沉积法 3 HYPERLINK \l _Toc219261288 1.3.4 磁控溅射沉积法 5 HYPERLINK \l _Toc219261289 第2章 实验 11 HYPERLINK \l _Toc219261290 2.1 实验研究路线 11 HYPERLINK \l _Toc219261293 2.2 实验设备及材料 11 HYPERLINK \l _Toc219261293 2.2 Cu薄膜制备 1 PAGEREF _Toc219261293 \h 2 HYPERLINK \l _Toc219261294 2.3.1 基片前处理 1 PAGEREF _Toc219261294 \h 2 HYPERLINK \l _Toc219261295 2.3.2 薄膜的制备 13 HYPERLINK \l _Toc219261296 第