烘干时间对锑掺杂二氧化锡涂覆钛基底电极的影.docVIP

烘干时间对锑掺杂二氧化锡涂覆钛基底电极的影.doc

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 Effect of Drying Time on the Antimony Doped Tin Dioxide Coated Titanium Electrode# 5 10 15 20 25 30 35 40  Abstract: The antimony doped tin dioxide coated titanium electrodes were prepared by dip-coating pyrolysis method with different drying time. The effect of drying time on the electrode activity, morphology, crystallinity and composition were discussed. The results indicated that electrode prepared by drying 10 minutes had higher activity towards phenol degradation than those prepared by drying 0 or 30 minutes. The relation between the activity and oxygen vacancies concentration was discussed. The TG-DTA analysis was used to monitor the reactions occurred during the electrode preparation. The results showed that there were three endothermic or exothermal peaks and the possible reactions were discussed. Key words: Environmental engineering; antimony doped tin dioxide; drying; electrochemical; coating 0 Introduction Antimony doped tin dioxide coated titanium electrode has attracted considerable research interest in recent years in electrochemical degradation of toxic organic contaminants in wastewater [1-5] and electrolytic generation of ozone due to its high efficiency and non lead-containing [6,7]. It has higher oxygen evolution potential which can hinder the thermodynamically favored oxygen evolution reaction, hence improve the efficiency for organic destruction [8-10]. The electrodes have been usually prepared by dip-coating pyrolysis method, sputtering method and chemical vapor deposition method etc [1,11-13]. The dip-coating pyrolysis method has been often used to prepare antimony doped tin dioxide electrodes due to its easy operation [14, 15]. This method always includes coating the metal chloride alcoholic solution onto titanium substrate, then drying at a temperature ranging from room temperature to 150 ℃ in an oven, and finally baking in a furnace at a higher temperature of 400-600 ℃. This coating, drying and baking process is repeated for 7-30 ti

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